Nanofabrication/Equipment/MA6

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MA6/BA6 Contact Aligner

Features

  • Front Side Alignment / Front to Back side Alignment
  • Exposure Optics: UV400 Lamp 350 Watts
  • UV lamp spectral Lines (nanometers):
    • 436 g-line
    • 405 h-line
    • 365 i-line
  • Filters available for g-line and i-line.
  • The aligner can be operated at constant illumination (intensity 25 mw/CI2 and 13mW/CI1) or constant power CP.
  • Mask Size: Various sizes available: 3x3, 4x4, 5x5, 7x7
  • Wafer Size: Various Size chucks are available for users: 2", 3", 4", 6".
  • Programs Description/Resolution
    • Soft contact A slight mechanical pressure is applied to produce contact.
      • 2 μ line resolution
    • Hard Contact Mechanical and Pneumatic pressure is applied to produce contact.
      • 1 μ line resolution
    • Vacuum/LowVac The contact between mask and wafer is optimized by evacuating the gap between the wafer and the mask.
      • 0.8 μ line resolution
    • Flood Exposure: Available as a Lamp Test.
   * Alignment tolerance: This depends on the program, photoresist, user experience, and wafer topography. On low vacuum or vacuum contact using a thin resist 0.5 μ alignment tolerance is achievable. 

User Proposal Feasibility

When requesting the use of this instrument, please provide the following information in your user proposal:

  • Sample materials, shapes, and sizes
  • Information about the intended patterns (shapes, sizes, distances, area coverage)
  • Do you have your own mask?
  • Number of samples to process or number of times of instrument usage

Questions? Please contact the instrument custodian before submitting your proposal.