Nanofabrication/Equipment/MA6

Features

• Front Side Alignment / Front to Back side Alignment
• Exposure Optics: UV400 Lamp 350 Watts
• UV lamp spectral Lines (nanometers):
  • 436 g-line
  • 405 h-line
  • 365 i-line

• Filters available for g-line and i-line.
• The aligner can be operated at constant illumination (intensity 25 mw/CI2 and 13mW/CI1) or constant power CP.
• Mask Size: Various sizes available: 3x3, 4x4, 5x5, 7x7
• Wafer Size: Various Size chucks are available for users: 2", 3", 4", 6".
• Programs Description/Resolution

• • Soft contact A slight mechanical pressure is applied to produce contact.
    • 2 μ line resolution
  • Hard Contact Mechanical and Pneumatic pressure is applied to produce contact.
    • 1 μ line resolution
  • Vacuum/LowVac The contact between mask and wafer is optimized by evacuating the gap between the wafer and the mask.
    • 0.8 μ line resolution
  • Flood Exposure: Available as a Lamp Test.

   * Alignment tolerance: This depends on the program, photoresist, user experience, and wafer topography. On low vacuum or vacuum contact using a thin resist 0.5 μ alignment tolerance is achievable.

User Proposal Feasibility

When requesting the use of this instrument, please provide the following information in your user proposal:

• Sample materials, shapes, and sizes
• Information about the intended patterns (shapes, sizes, distances, area coverage)
• Do you have your own mask?
• Number of samples to process or number of times of instrument usage

Questions? Please contact the instrument custodian before submitting your proposal.