Nanofabrication/Equipment/ICP-CVD Deposition System

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ICP - CVD Deposition System System

The instrument is located in the clean room,


Features

Plasmalab System 100 is configured for ICP-CVD deposition of amorphous Si, SiNx, SiO2, SiC, and TEOS. This tool can process 200 mm wafers at temperatures up to 400 °C with a loadlock for higher quality film depositions. The ICP power creates volatile deposition species at lower temperatures with film deposition occurring at substrate temperatures as low as 80 °C.


User Proposal Feasibility

When requesting the use of this instrument, please provide the following information in your user proposal:

  • Sample materials, shapes, and sizes
  • Temperature compatibility of samples.
  • Number of samples to process or number of times of instrument usage

Questions? Please contact the instrument custodian before submitting your proposal.

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