Plasmalab System 100 is configured for ICP-CVD deposition of amorphous Si, SiNx, SiO2, SiC, and TEOS. This tool can process 200 mm wafers at temperatures up to 400 °C with a loadlock for higher quality film depositions. The ICP power creates volatile deposition species at lower temperatures with film deposition occurring at substrate temperatures as low as 80 °C.
User Proposal Feasibility
When requesting the use of this instrument, please provide the following information in your user proposal:
Sample materials, shapes, and sizes
Temperature compatibility of samples.
Number of samples to process or number of times of instrument usage
Questions? Please contact the instrument custodian before submitting your proposal.
