Nanofabrication/Equipment/REACTIVE ION ETCHERS

• There are two systems CS-1701 RIE, one for fluorinated gases and one for chlorinated gases. The operational procedure is identical for both systems and they can be used in the same time.
• The CS-1701 RIE consists of two modules: a reaction chamber/process controller (base pressure 50 mT) and a solid state RF power generator (max. 600 W).
• The process controller monitors and regulates the variable parameters of the plasma process, including chamber pressure, RF power level, process time, and gas flow rates.
  • The gases for the RIE – Fluorine chamber are: Ar, O₂, CF₄, H₂, and SF₆. The estimated etch rate are: TiW: 5,000 Å/min, SiO₂: 3,000 – 7,000 Å/min.
  • The gases for the RIE – Chlorine chamber are: Ar, O₂, Cl₂, H₂, and CH₄. The estimated etch rate are: Al: 1μm/min, GaAs: 1μm/min.

User Proposal Feasibility

When requesting the use of this instrument, please provide the following information in your user proposal:

• Sample materials
• Number of samples to process or number of times of instrument usage

Questions? Please contact the instrument custodian before submitting your proposal.