There are two systems CS-1701 RIE, one for fluorinated gases and one for chlorinated gases. The operational procedure is identical for both systems and they can be used in the same time.
The CS-1701 RIE consists of two modules: a reaction chamber/process controller (base pressure 50 mT) and a solid state RF power generator (max. 600 W).
The process controller monitors and regulates the variable parameters of the plasma process, including chamber pressure, RF power level, process time, and gas flow rates.
The gases for the RIE – Fluorine chamber are: Ar, O2, CF4, H2, and SF6. The estimated etch rate are: TiW: 5,000 Å/min, SiO2: 3,000 – 7,000 Å/min.
The gases for the RIE – Chlorine chamber are: Ar, O2, Cl2, H2, and CH4. The estimated etch rate are: Al: 1μm/min, GaAs: 1μm/min.
User Proposal Feasibility
When requesting the use of this instrument, please provide the following information in your user proposal:
Sample materials
Number of samples to process or number of times of instrument usage
Questions? Please contact the instrument custodian before submitting your proposal.
