Nanofabrication/Equipment/REACTIVE ION ETCHERS: Difference between revisions
< Nanofabrication | Equipment
Jump to navigation
Jump to search
(Created page with "right|300px| * There are two systems CS-1701 RIE, one for fluorinated gases and one for chlorinated gases. The operational procedure is identical f...") |
No edit summary |
||
| Line 1: | Line 1: | ||
[[Image: | [[Image:March.JPG|right|400px|]] | ||
* There are two systems CS-1701 RIE, one for fluorinated gases and one for chlorinated gases. The operational procedure is identical for both systems and they can be used in the same time. | * There are two systems CS-1701 RIE, one for fluorinated gases and one for chlorinated gases. The operational procedure is identical for both systems and they can be used in the same time. | ||
Revision as of 16:47, November 25, 2020
- There are two systems CS-1701 RIE, one for fluorinated gases and one for chlorinated gases. The operational procedure is identical for both systems and they can be used in the same time.
- The CS-1701 RIE consists of two modules: a reaction chamber/process controller (base pressure 50 mT) and a solid state RF power generator (max. 600 W).
- The process controller monitors and regulates the variable parameters of the plasma process, including chamber pressure, RF power level, process time, and gas flow rates.
- The gases for the RIE – Fluorine chamber are: Ar, O2, CF4, H2, and SF6. The estimated etch rate are: TiW: 5,000 Å/min, SiO2: 3,000 – 7,000 Å/min.
- The gases for the RIE – Chlorine chamber are: Ar, O2, Cl2, H2, and CH4. The estimated etch rate are: Al: 1μm/min, GaAs: 1μm/min.