Nanofabrication/Equipment/ICP-CVD Deposition System: Difference between revisions
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== ICP - CVD Deposition System System== | == ICP - CVD Deposition System System== | ||
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Latest revision as of 20:34, November 23, 2020
ICP - CVD Deposition System System
Features
Plasmalab System 100 is configured for ICP-CVD deposition of amorphous Si, SiNx, SiO2, SiC, and TEOS. This tool can process 200 mm wafers at temperatures up to 400 °C with a loadlock for higher quality film depositions. The ICP power creates volatile deposition species at lower temperatures with film deposition occurring at substrate temperatures as low as 80 °C.
User Proposal Feasibility
When requesting the use of this instrument, please provide the following information in your user proposal:
- Sample materials, shapes, and sizes
- Temperature compatibility of samples.
- Number of samples to process or number of times of instrument usage
Questions? Please contact the instrument custodian before submitting your proposal.