Nanofabrication/Equipment/REACTIVE ION ETCHERS: Difference between revisions
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===March RIE etchers=== | |||
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* There are two systems CS-1701 RIE, one for fluorinated gases and one for chlorinated gases. The operational procedure is identical for both systems and they can be used in the same time. | * There are two systems CS-1701 RIE, one for fluorinated gases and one for chlorinated gases. The operational procedure is identical for both systems and they can be used in the same time. | ||
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** The gases for the RIE – Fluorine chamber are: Ar, O<sub>2</sub>, CF<sub>4</sub>, H<sub>2</sub>, and SF<sub>6</sub>. The estimated etch rate are: TiW: 5,000 Å/min, SiO<sub>2</sub>: 3,000 – 7,000 Å/min. | ** The gases for the RIE – Fluorine chamber are: Ar, O<sub>2</sub>, CF<sub>4</sub>, H<sub>2</sub>, and SF<sub>6</sub>. The estimated etch rate are: TiW: 5,000 Å/min, SiO<sub>2</sub>: 3,000 – 7,000 Å/min. | ||
** The gases for the RIE – Chlorine chamber are: Ar, O<sub>2</sub>, Cl<sub>2</sub>, H<sub>2</sub>, and CH<sub>4</sub>. The estimated etch rate are: Al: 1μm/min, GaAs: 1μm/min. | ** The gases for the RIE – Chlorine chamber are: Ar, O<sub>2</sub>, Cl<sub>2</sub>, H<sub>2</sub>, and CH<sub>4</sub>. The estimated etch rate are: Al: 1μm/min, GaAs: 1μm/min. | ||
===User Proposal Feasibility=== | |||
When requesting the use of this instrument, please provide the following information in your user proposal: | |||
* Sample materials | |||
* Number of samples to process or number of times of instrument usage | |||
Questions? Please contact the instrument custodian before submitting your proposal. | |||
Latest revision as of 17:15, November 25, 2020
March RIE etchers
- There are two systems CS-1701 RIE, one for fluorinated gases and one for chlorinated gases. The operational procedure is identical for both systems and they can be used in the same time.
- The CS-1701 RIE consists of two modules: a reaction chamber/process controller (base pressure 50 mT) and a solid state RF power generator (max. 600 W).
- The process controller monitors and regulates the variable parameters of the plasma process, including chamber pressure, RF power level, process time, and gas flow rates.
- The gases for the RIE – Fluorine chamber are: Ar, O2, CF4, H2, and SF6. The estimated etch rate are: TiW: 5,000 Å/min, SiO2: 3,000 – 7,000 Å/min.
- The gases for the RIE – Chlorine chamber are: Ar, O2, Cl2, H2, and CH4. The estimated etch rate are: Al: 1μm/min, GaAs: 1μm/min.
User Proposal Feasibility
When requesting the use of this instrument, please provide the following information in your user proposal:
- Sample materials
- Number of samples to process or number of times of instrument usage
Questions? Please contact the instrument custodian before submitting your proposal.