Nanofabrication/Equipment/MA6: Difference between revisions
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(Created page with " == MA6/BA6 Contact Aligner == == Features == * Front Side Alignment / Front to Back side Alignment * Exposure Optics: UV400 Lamp 350 Watts * UV lamp spectral Li...") |
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== MA6/BA6 Contact Aligner == | == MA6/BA6 Contact Aligner == | ||
== Features == | == Features == | ||
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** Flood Exposure: Available as a Lamp Test. | ** Flood Exposure: Available as a Lamp Test. | ||
* Alignment tolerance: This depends on the program, photoresist, user experience, and wafer topography. On low vacuum or vacuum contact using a thin resist 0.5 μ alignment tolerance is achievable. | * Alignment tolerance: This depends on the program, photoresist, user experience, and wafer topography. On low vacuum or vacuum contact using a thin resist 0.5 μ alignment tolerance is achievable. | ||
== User Proposal Feasibility == | == User Proposal Feasibility == | ||
Latest revision as of 19:03, June 3, 2021
MA6/BA6 Contact Aligner
Features
- Front Side Alignment / Front to Back side Alignment
- Exposure Optics: UV400 Lamp 350 Watts
- UV lamp spectral Lines (nanometers):
- 436 g-line
- 405 h-line
- 365 i-line
- Filters available for g-line and i-line.
- The aligner can be operated at constant illumination (intensity 25 mw/CI2 and 13mW/CI1) or constant power CP.
- Mask Size: Various sizes available: 3x3, 4x4, 5x5, 7x7
- Wafer Size: Various Size chucks are available for users: 2", 3", 4", 6".
- Programs Description/Resolution
- Soft contact A slight mechanical pressure is applied to produce contact.
- 2 μ line resolution
- Hard Contact Mechanical and Pneumatic pressure is applied to produce contact.
- 1 μ line resolution
- Vacuum/LowVac The contact between mask and wafer is optimized by evacuating the gap between the wafer and the mask.
- 0.8 μ line resolution
- Flood Exposure: Available as a Lamp Test.
- Soft contact A slight mechanical pressure is applied to produce contact.
* Alignment tolerance: This depends on the program, photoresist, user experience, and wafer topography. On low vacuum or vacuum contact using a thin resist 0.5 μ alignment tolerance is achievable.
User Proposal Feasibility
When requesting the use of this instrument, please provide the following information in your user proposal:
- Sample materials, shapes, and sizes
- Information about the intended patterns (shapes, sizes, distances, area coverage)
- Do you have your own mask?
- Number of samples to process or number of times of instrument usage
Questions? Please contact the instrument custodian before submitting your proposal.