Oxford ICP etching system (2 chambers - 1 loadlock)
Features
PlasmaLab System 100 (Oxford Instruments) located in C122. The system comprises two process stations (Chamber 1 (ICP 180) dedicated to chlorine-based etch chemistry and Process Chamber 3 (ICP 180) dedicated to fluorine-based etch chemistry) and a single automatic load lock / transfer chamber. Process chamber capable for 4" .
The gases available for the ICP – Chlorine chamber are: Ar, O2, Cl2, BCl3, CO, SF6, CHF3, and HBr.
The gases available for the RIE – Fluorine chamber are: Ar, O2, CF4, CH4, SF6, CHF3, HCFC-124, and H2.
For Process Station ICP 180 the typical process operating ranges are:
base pressure = 10-6 Torr
total gas flows = 10 to 200 sccm
pressure = 1 to 60 mT
RF power = 5W to 300 W
ICP power = 200W to 3000W
He pressure = 0 to 30 Torr
Temperature = -130oC to 600oC
Liquid Nitrogen for temperature control
For Process Station RIE the typical process operating ranges are:
base pressure = 10-6 Torr
total gas flows = 10 to 150 sccm
pressure = 5 to 500 mT
RF power = 20W to 600 W
He pressure = 0 to 30 Torr
User Proposal Feasibility
When requesting the use of this instrument, please provide the following information in your user proposal:
Sample materials
Number of samples to process or number of times of instrument usage
Questions? Please contact the instrument custodian before submitting your proposal
