Nanofabrication/Equipment/Oxford ICP and RIE etching system

Oxford ICP and RIE Etcher (1 loadlock, 2 chambers)

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Features

PlasmaLab System 100 (Oxford Instruments) located in C122. The system comprises two process stations (Process Station 1 (ICP 180) dedicated to chlorine-based etch chemistry and Process Station 2 (RIE) dedicated to fluorine-based etch chemistry) and a single automatic load lock / transfer chamber. Process chamber capable for 4" and 6" wafers.

• The gases available for the ICP Chamber 1 – Chlorine chamber are: Ar, O₂, Cl₂, BCl₃, CO, SF₆, CHF₃, and HBr.
• The gases available for the ICP Chamber 3 – Fluorine chamber are: Ar, O₂, CF₄, CH₄, SF₆, CHF₃, HCFC-124, and H₂.
• For Process Station ICP 180 the typical process operating ranges are:
  • base pressure = 10^-6 Torr
  • total gas flows = 10 to 200 sccm
  • pressure = 1 to 60 mT
  • RF power = 5W to 300 W
  • ICP power = 200W to 3000W
  • He pressure = 0 to 30 Torr
  • Temperature = -130^oC to 600^oC
  • Liquid Nitrogen for temperature control
• For Process Station RIE the typical process operating ranges are:
  • base pressure = 10^-6 Torr
  • total gas flows = 10 to 150 sccm
  • pressure = 5 to 500 mT
  • RF power = 20W to 600 W
  • He pressure = 0 to 30 Torr
  • Temperature = -130^oC to 600^oC
  • Liquid Nitrogen for temperature control
• The operational procedure is identical for both stations and only one station can be used at a time.