Nanofabrication/Equipment/Oxford ICP etching system: Difference between revisions

From CNM Wiki
Jump to navigation Jump to search
No edit summary
No edit summary
 
(2 intermediate revisions by the same user not shown)
Line 1: Line 1:


===Oxford ICP etching system (2 chambers - 1 loadlock)===
===Oxford ICP etching system (2 chambers - 1 loadlock)===
 
[[Image:ICPRIE.JPG|right|400px|]]


===Features===
===Features===
:PlasmaLab System 100 (Oxford Instruments) located in C122. The system comprises two process stations (Process Station 1 (ICP 180) dedicated to chlorine-based etch chemistry and Process Station 2 (ICP) dedicated to fluorine-based etch chemistry) and a single automatic load lock / transfer chamber. Process chamber capable for 4" .   
:PlasmaLab System 100 (Oxford Instruments) located in C122. The system comprises two process stations (Chamber 1 (ICP 180) dedicated to chlorine-based etch chemistry and Process Chamber 3 (ICP 180) dedicated to fluorine-based etch chemistry) and a single automatic load lock / transfer chamber. Process chamber capable for 4" .   
*The gases available for the ICP – Chlorine chamber are: Ar, O<sub>2</sub>, Cl<sub>2</sub>, BCl<sub>3</sub>, CO, SF<sub>6</sub>, CHF<sub>3</sub>, and HBr.  
*The gases available for the ICP – Chlorine chamber are: Ar, O<sub>2</sub>, Cl<sub>2</sub>, BCl<sub>3</sub>, CO, SF<sub>6</sub>, CHF<sub>3</sub>, and HBr.  
*The gases available for the RIE – Fluorine chamber are: Ar, O<sub>2</sub>, CF<sub>4</sub>, CH<sub>4</sub>, SF<sub>6</sub>, CHF<sub>3</sub>, HCFC-124, and H<sub>2</sub>.
*The gases available for the RIE – Fluorine chamber are: Ar, O<sub>2</sub>, CF<sub>4</sub>, CH<sub>4</sub>, SF<sub>6</sub>, CHF<sub>3</sub>, HCFC-124, and H<sub>2</sub>.
Line 22: Line 22:
** RF power = 20W to 600 W
** RF power = 20W to 600 W
** He pressure = 0 to 30 Torr
** He pressure = 0 to 30 Torr
===User Proposal Feasibility===
When requesting the use of this instrument, please provide the following information in your user proposal:
* Sample materials
* Number of samples to process or number of times of instrument usage
Questions? Please contact the instrument custodian before submitting your proposal

Latest revision as of 17:23, November 25, 2020

Oxford ICP etching system (2 chambers - 1 loadlock)

ICPRIE.JPG

Features

PlasmaLab System 100 (Oxford Instruments) located in C122. The system comprises two process stations (Chamber 1 (ICP 180) dedicated to chlorine-based etch chemistry and Process Chamber 3 (ICP 180) dedicated to fluorine-based etch chemistry) and a single automatic load lock / transfer chamber. Process chamber capable for 4" .
  • The gases available for the ICP – Chlorine chamber are: Ar, O2, Cl2, BCl3, CO, SF6, CHF3, and HBr.
  • The gases available for the RIE – Fluorine chamber are: Ar, O2, CF4, CH4, SF6, CHF3, HCFC-124, and H2.
  • For Process Station ICP 180 the typical process operating ranges are:
    • base pressure = 10-6 Torr
    • total gas flows = 10 to 200 sccm
    • pressure = 1 to 60 mT
    • RF power = 5W to 300 W
    • ICP power = 200W to 3000W
    • He pressure = 0 to 30 Torr
    • Temperature = -130oC to 600oC
    • Liquid Nitrogen for temperature control
  • For Process Station RIE the typical process operating ranges are:
    • base pressure = 10-6 Torr
    • total gas flows = 10 to 150 sccm
    • pressure = 5 to 500 mT
    • RF power = 20W to 600 W
    • He pressure = 0 to 30 Torr

User Proposal Feasibility

When requesting the use of this instrument, please provide the following information in your user proposal:

  • Sample materials
  • Number of samples to process or number of times of instrument usage

Questions? Please contact the instrument custodian before submitting your proposal

Retrieved from "https://wiki.anl.gov/wiki_cnm/index.php?title=Nanofabrication/Equipment/Oxford_ICP_etching_system&oldid=6735"