Nanofabrication/Equipment/Oxford ICP etching system: Difference between revisions
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===Oxford ICP etching system (2 chambers - 1 loadlock)=== | |||
[[Image:ICPRIE.JPG|right|400px|]] | |||
===Features=== | ===Features=== | ||
:PlasmaLab System 100 (Oxford Instruments) located in C122. The system comprises two process stations ( | :PlasmaLab System 100 (Oxford Instruments) located in C122. The system comprises two process stations (Chamber 1 (ICP 180) dedicated to chlorine-based etch chemistry and Process Chamber 3 (ICP 180) dedicated to fluorine-based etch chemistry) and a single automatic load lock / transfer chamber. Process chamber capable for 4" . | ||
*The gases available for the ICP – Chlorine chamber are: Ar, O<sub>2</sub>, Cl<sub>2</sub>, BCl<sub>3</sub>, CO, SF<sub>6</sub>, CHF<sub>3</sub>, and HBr. | *The gases available for the ICP – Chlorine chamber are: Ar, O<sub>2</sub>, Cl<sub>2</sub>, BCl<sub>3</sub>, CO, SF<sub>6</sub>, CHF<sub>3</sub>, and HBr. | ||
*The gases available for the RIE – Fluorine chamber are: Ar, O<sub>2</sub>, CF<sub>4</sub>, CH<sub>4</sub>, SF<sub>6</sub>, CHF<sub>3</sub>, HCFC-124, and H<sub>2</sub>. | *The gases available for the RIE – Fluorine chamber are: Ar, O<sub>2</sub>, CF<sub>4</sub>, CH<sub>4</sub>, SF<sub>6</sub>, CHF<sub>3</sub>, HCFC-124, and H<sub>2</sub>. | ||
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** RF power = 20W to 600 W | ** RF power = 20W to 600 W | ||
** He pressure = 0 to 30 Torr | ** He pressure = 0 to 30 Torr | ||
===User Proposal Feasibility=== | |||
When requesting the use of this instrument, please provide the following information in your user proposal: | |||
* Sample materials | |||
* Number of samples to process or number of times of instrument usage | |||
Questions? Please contact the instrument custodian before submitting your proposal | |||
Latest revision as of 17:23, November 25, 2020
Oxford ICP etching system (2 chambers - 1 loadlock)
Features
- PlasmaLab System 100 (Oxford Instruments) located in C122. The system comprises two process stations (Chamber 1 (ICP 180) dedicated to chlorine-based etch chemistry and Process Chamber 3 (ICP 180) dedicated to fluorine-based etch chemistry) and a single automatic load lock / transfer chamber. Process chamber capable for 4" .
- The gases available for the ICP – Chlorine chamber are: Ar, O2, Cl2, BCl3, CO, SF6, CHF3, and HBr.
- The gases available for the RIE – Fluorine chamber are: Ar, O2, CF4, CH4, SF6, CHF3, HCFC-124, and H2.
- For Process Station ICP 180 the typical process operating ranges are:
- base pressure = 10-6 Torr
- total gas flows = 10 to 200 sccm
- pressure = 1 to 60 mT
- RF power = 5W to 300 W
- ICP power = 200W to 3000W
- He pressure = 0 to 30 Torr
- Temperature = -130oC to 600oC
- Liquid Nitrogen for temperature control
- For Process Station RIE the typical process operating ranges are:
- base pressure = 10-6 Torr
- total gas flows = 10 to 150 sccm
- pressure = 5 to 500 mT
- RF power = 20W to 600 W
- He pressure = 0 to 30 Torr
User Proposal Feasibility
When requesting the use of this instrument, please provide the following information in your user proposal:
- Sample materials
- Number of samples to process or number of times of instrument usage
Questions? Please contact the instrument custodian before submitting your proposal