MA6
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Features
- Front Side Alignment / Front to Back side Alignment
- Exposure Optics: UV400 Lamp 350 Watts
- UV lamp spectral Lines (nanometers):
- 436 g-line
- 405 h-line
- 365 i-line
- Filters available for g-line and i-line.
- The aligner can be operated at constant illumination (intensity 25 mw/CI2 and 13mW/CI1) or constant power CP.
- Mask Size: Various sizes available: 3x3, 4x4, 5x5, 7x7
- Wafer Size: Various Size chucks are available for users: 2", 3", 4", 6".
- Programs Description/Resolution
- Soft contact A slight mechanical pressure is applied to produce contact.
- 2 μ line resolution
- Hard Contact Mechanical and Pneumatic pressure is applied to produce contact.
- 1 μ line resolution
- Vacuum/LowVac The contact between mask and wafer is optimized by evacuating the gap between the wafer and the mask.
- 0.8 μ line resolution
- Flood Exposure: Available as a Lamp Test.
- Soft contact A slight mechanical pressure is applied to produce contact.
* Alignment tolerance: This depends on the program, photoresist, user experience, and wafer topography. On low vacuum or vacuum contact using a thin resist 0.5 μ alignment tolerance is achievable.