View source for Nanofabrication/Equipment/Oxford ICP and RIE etching system

== Oxford ICP and RIE Etcher (1 loadlock, 2 chambers)==
[[Image:ICPRIE.JPG|right|400px|]]



===Features===
:PlasmaLab System 100 (Oxford Instruments) located in C122. The system comprises two process stations (Process Station 1 (ICP 180) dedicated to chlorine-based etch chemistry and Process Station 2 (RIE) dedicated to fluorine-based etch chemistry) and a single automatic load lock / transfer chamber. Process chamber capable for 4" and 6" wafers.  
*The gases available for the ICP Chamber 1 – Chlorine chamber are: Ar, O<sub>2</sub>, Cl<sub>2</sub>, BCl<sub>3</sub>, CO, SF<sub>6</sub>, CHF<sub>3</sub>, and HBr. 
*The gases available for the ICP Chamber 3 – Fluorine chamber are: Ar, O<sub>2</sub>, CF<sub>4</sub>, CH<sub>4</sub>, SF<sub>6</sub>, CHF<sub>3</sub>, HCFC-124, and H<sub>2</sub>.
*For Process Station ICP 180 the typical process operating ranges are:
** base pressure = 10<sup>-6</sup> Torr
** total gas flows = 10 to 200 sccm
** pressure = 1 to 60 mT
** RF power = 5W to 300 W
** ICP power = 200W to 3000W
** He pressure = 0 to 30 Torr
** Temperature = -130<sup>o</sup>C to 600<sup>o</sup>C
** Liquid Nitrogen for temperature control
*For Process Station RIE the typical process operating ranges are:
** base pressure = 10<sup>-6</sup> Torr
** total gas flows = 10 to 150 sccm
** pressure = 5 to 500 mT
** RF power = 20W to 600 W
** He pressure = 0 to 30 Torr
** Temperature = -130<sup>o</sup>C to 600<sup>o</sup>C
** Liquid Nitrogen for temperature control
*The operational procedure is identical for both stations and only one station can be used at a time.