CNM Wiki - User contributions [en]

Nanofabrication

2021-06-03T19:35:41Z

Csmiller: /* Nanofabrication */

== CNM Cleanroom ==

* [[Nanofabrication/Equipment | Nanofabrication Equipment Descriptions]]

Nanofabrication

2021-06-03T19:16:34Z

Csmiller: Undo revision 6935 by Csmiller (talk)

== CNM Cleanroom ==

* [[Nanofabrication/Equipment | Nanofabrication Equipment Descriptions]]

==Nanofabrication ==
Fabrication:

* [[Patterning]]
* [[Etching]]
* [[Deposition]]
* [[Thermal/Misc]]
* [[Metrology]]
* [[Post Processing]]

{{Standard Footer}}

Nanofabrication

2021-06-03T19:14:24Z

Csmiller: /* Nanofabrication */

== CNM Cleanroom ==

* [[Nanofabrication/Equipment | Nanofabrication Equipment Descriptions]]

==Nanofabrication ==
Fabrication:

* [[Nanobrication |Patterning]]
* [[Etching]]
* [[Deposition]]
* [[Thermal/Misc]]
* [[Metrology]]
* [[Post Processing]]

{{Standard Footer}}

Patterning

2021-06-03T19:11:50Z

Csmiller: /* Patterning */

== Patterning ==

<gallery>
LaserWriter.jpg|

</gallery>
Patterning is where you take a design and transfer it onto a substrate. Transferring the pattern can be done by multiple methods.
Typically you spin photoresist on a substrate, expose the pattern (using electrons or light in the optical range). Once the sample is exposed it is developed.
;[[Photoresist]]
;[[Spinners]]
;[[Ovens]]
;[[Hotplate]]
;[[MA6 : Contact Lithography]]
;[[Laser Pattern Generator LW405]]
;[[MLA150]]
;[[JEOL8100]]
;[[Raith]]

Patterning

2021-06-03T19:08:23Z

Csmiller: /* Patterning */

== Patterning ==

<gallery>
LaserWriter.jpg|

</gallery>
Patterning is where you take a design and transfer it onto a substrate. Transferring the pattern can be done by multiple methods.
;[[Photoresist]]
;[[Spinners]]
;[[Ovens]]
;[[Hotplate]]
;[[MA6 : Contact Lithography]]
;[[Laser Pattern Generator LW405]]
;[[MLA150]]
;[[JEOL8100]]
;[[Raith]]

Patterning

2021-06-03T19:05:54Z

Csmiller: /* Patterning */

== Patterning ==

<gallery>
LaserWriter.jpg|Laser Pattern Generator LW405

</gallery>
;[[Photoresist]]
;[[Spinners]]
;[[Ovens]]
;[[Hotplate]]
;[[MA6 : Contact Lithography]]
;[[Laser Pattern Generator LW405]]
;[[MLA150]]
;[[JEOL8100]]
;[[Raith]]

Nanofabrication/Equipment/MA6

2021-06-03T19:03:20Z

Csmiller: /* Features */

== MA6/BA6 Contact Aligner ==

== Features ==

* Front Side Alignment / Front to Back side Alignment
* Exposure Optics: UV400 Lamp 350 Watts
* UV lamp spectral Lines (nanometers):
** 436 g-line
** 405 h-line
** 365 i-line

* Filters available for g-line and i-line.
* The aligner can be operated at constant illumination (intensity 25 mw/CI2 and 13mW/CI1) or constant power CP.
* Mask Size: Various sizes available: 3x3, 4x4, 5x5, 7x7
* Wafer Size: Various Size chucks are available for users: 2", 3", 4", 6".
* Programs Description/Resolution

** Soft contact A slight mechanical pressure is applied to produce contact.
*** 2 μ line resolution
** Hard Contact Mechanical and Pneumatic pressure is applied to produce contact.
*** 1 μ line resolution
** Vacuum/LowVac The contact between mask and wafer is optimized by evacuating the gap between the wafer and the mask.
*** 0.8 μ line resolution
** Flood Exposure: Available as a Lamp Test.

* Alignment tolerance: This depends on the program, photoresist, user experience, and wafer topography. On low vacuum or vacuum contact using a thin resist 0.5 μ alignment tolerance is achievable.

== User Proposal Feasibility ==

When requesting the use of this instrument, please provide the following information in your user proposal:

* Sample materials, shapes, and sizes
* Information about the intended patterns (shapes, sizes, distances, area coverage)
* Do you have your own mask?
* Number of samples to process or number of times of instrument usage

Questions? Please contact the instrument custodian before submitting your proposal.

MA6

2021-06-03T19:02:59Z

Csmiller: Created page with "== Features == * Front Side Alignment / Front to Back side Alignment * Exposure Optics: UV400 Lamp 350 Watts * UV lamp spectral Lines (nanometers): ** 436 g-line ** 405 h-li..."

== Features ==

* Front Side Alignment / Front to Back side Alignment
* Exposure Optics: UV400 Lamp 350 Watts
* UV lamp spectral Lines (nanometers):
** 436 g-line
** 405 h-line
** 365 i-line

* Filters available for g-line and i-line.
* The aligner can be operated at constant illumination (intensity 25 mw/CI2 and 13mW/CI1) or constant power CP.
* Mask Size: Various sizes available: 3x3, 4x4, 5x5, 7x7
* Wafer Size: Various Size chucks are available for users: 2", 3", 4", 6".
* Programs Description/Resolution

** Soft contact A slight mechanical pressure is applied to produce contact.
*** 2 μ line resolution
** Hard Contact Mechanical and Pneumatic pressure is applied to produce contact.
*** 1 μ line resolution
** Vacuum/LowVac The contact between mask and wafer is optimized by evacuating the gap between the wafer and the mask.
*** 0.8 μ line resolution
** Flood Exposure: Available as a Lamp Test.

* Alignment tolerance: This depends on the program, photoresist, user experience, and wafer topography. On low vacuum or vacuum contact using a thin resist 0.5 μ alignment tolerance is achievable.

Nanofabrication/Equipment/MA6

2021-06-03T19:01:57Z

Csmiller: /* MA6/BA6 Contact Aligner */

Nanofabrication

2021-06-02T20:34:22Z

Csmiller: /* test new */

Nanofabrication

2021-06-02T20:33:38Z

Csmiller: /* CNM Cleanroom */

== CNM Cleanroom ==

* [[Nanofabrication/Equipment | Nanofabrication Equipment Descriptions]]

==test new ==
Fabrication:

* [[Patterning]]
* [[Etching]]
* [[Deposition]]
* [[Thermal/Misc]]
* [[Metrology]]
* [[Post Processing]]

{{Standard Footer}}

Photoresist

2021-06-02T20:32:07Z

Csmiller: Created page with " :Kayakuam :[https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf] is the supplier of our Shipley 1800's, MicroResist Technology, SU8, LOR, SPR, and PMMA photoresists,..."

:Kayakuam :[https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf] is the supplier of our Shipley 1800's, MicroResist Technology, SU8, LOR, SPR, and PMMA photoresists, developers, and strippers.

:ZEON :[http://www.zeon.co.jp/index_e.html ZEON] is the supplier of our ZEP photoresists

{| class="wikitable sortable" style="margin: 1em 1em 1em 1em" cellpadding=5px
|- style="background:lightgrey" align=center
! Resist Name !! Photoresist Type !! Tk/Flavor!! Developer!! Strippers!! Optical (MA6, Stepper) !! Laser Writer!! EBEAM Lith. (JEOL, RAITH)!! Process Data Sheet
|-
| 1800 Series
| positive || 1805, 1813, 1818|| 351 Dev: H20 (1:4) ratios can vary || Acetone/IPA or 1165 || yes|| yes|| || https://kayakuam.com/wp-content/uploads/2019/09/S1800-G2.pdf
|-

|-
|AZ P4620
| positive|| 1700 - 2600 nm|| 351 Dev: H20 (1:4) ratios can vary || Acetone/IPA or 1165 || yes|| yes|| ||
|-
|SPR 220 series
| positive||3, 7 i-line photoresist||CD26 || Acetone/IPA or 1165 || yes|| yes|| || https://kayakuam.com/wp-content/uploads/2019/10/SPR_220_DATA_SHEET_RH.pdf
|-

|-
|SPR 955-CM Series
| positive||nm||CD26 || Acetone/IPA or 1165 || yes|| yes(MLA)|| || https://kayakuam.com/products/megaposit-spr955-cm-series-high-resolution-i-line-photoresists/
|-
|LOR 3A, 30B
| positive||nm||CD26 || Acetone/IPA or 1165 || yes|| yes|| || https://kayakuam.com/wp-content/uploads/2019/09/KAM-LOR-PMGI-Data-Sheet-11719.pdf
|-
|AZ nLOF 2000
| negative|| || 351 Dev: H20 (1:3) ratios can vary|| Acetone/IPA or 1165 || || || |yes||||
|-
|ma-N 1400 Series
| negative|| || Ma-D 355|| Acetone/IPA or 1165 || || || |yes|||https://kayakuam.com/wp-content/uploads/2019/09/ma-N-1400-400-overview.pdf|
|-
| SU8
| negative|| || SU8 Developer|| Acetone/IPA or 1165 || yes|| |yes (MLA) ||yes|||https://kayakuam.com/wp-content/uploads/2020/09/KAM-SU-8-2-25-Datasheet-9.3.20-final.pdf|
|-
| SU8 3000
| negative|| || SU8 Developer|| Acetone/IPA or 1165 || |yes|| |yes (MLA) ||yes||||
|-
|ZEP
| positive|| || MIBK: IPA 1:3|| Acetone/IPA or 1165 || || || |yes||||
|-
| PMMA 495
| positive||A2, A3||| MIBK: IPA 1:3|| Acetone/IPA or 1165 || || || |yes|||https://kayakuam.com/wp-content/uploads/2019/09/PMMA_Data_Sheet.pdf|
|-
| PMMA 950
| positive||A2, A3, A4, A8, A11|| MIBK: IPA 1:3|| Acetone/IPA or 1165 || || || |yes|||https://kayakuam.com/wp-content/uploads/2019/09/PMMA_Data_Sheet.pdf|
|}

Patterning

2021-06-02T20:28:07Z

Csmiller: /* Patterning */

== Patterning ==

<gallery>
LaserWriter.jpg|Laser Pattern Generator LW405

</gallery>
;[[Photoresist]]
;[[Spinners]]
;[[Ovens]]
;[[Hotplate]]
;[[MA6]]
;[[Laser Pattern Generator LW405]]
;[[MLA150]]
;[[JEOL8100]]
;[[Raith]]

Patterning

2021-06-02T20:27:06Z

Csmiller: /* Patterning */

== Patterning ==

<gallery>
LaserWriter.jpg|Laser Pattern Generator LW405

</gallery>
;[[Spinners]]
;[[Ovens]]
;[[Hotplate]]
;[[MA6]]
;[[Laser Pattern Generator LW405]]
;[[MLA150]]
;[[JEOL8100]]
;[[Raith]]

Patterning

2021-06-02T20:27:02Z

Csmiller: /* Patterning */

Nanofabrication

2021-06-02T20:26:23Z

Csmiller: /* CNM Cleanroom */

== CNM Cleanroom ==

* [[Nanofabrication/Equipment | Nanofabrication Equipment Descriptions]]
* [[Nanofabrication/Photoresist | Nanofabrication Photoresist Information]]

==test new ==
Fabrication:

* [[Patterning]]
* [[Etching]]
* [[Deposition]]
* [[Thermal/Misc]]
* [[Metrology]]
* [[Post Processing]]

{{Standard Footer}}

Nanofabrication

2021-06-02T20:25:39Z

Csmiller: /* test new */

== CNM Cleanroom ==

* [[Nanofabrication/Equipment | Nanofabrication Equipment Descriptions]]
* [[Nanofabrication/Photoresist | Nanofabrication Photoresist Information]]
* [[Nanofabrication/Processes | Nanofabrication Process Information]]

==test new ==
Fabrication:

* [[Patterning]]
* [[Etching]]
* [[Deposition]]
* [[Thermal/Misc]]
* [[Metrology]]
* [[Post Processing]]

{{Standard Footer}}

Nanofabrication

2021-06-02T20:24:56Z

Csmiller: /* CNM Cleanroom */

== CNM Cleanroom ==

* [[Nanofabrication/Equipment | Nanofabrication Equipment Descriptions]]
* [[Nanofabrication/Photoresist | Nanofabrication Photoresist Information]]
* [[Nanofabrication/Processes | Nanofabrication Process Information]]

==test new ==
Fabrication:

* [[Patterning]]
* [[Etching]]
* [[Deposition]]
* [[Thermal/Misc]]
* [[Post Processing]]

{{Standard Footer}}

Nanofabrication

2021-06-01T21:33:28Z

Csmiller: /* test new */

== CNM Cleanroom ==

* [[Nanofabrication/Equipment | Nanofabrication Equipment Descriptions]]
* [[Nanofabrication/Photoresist | Nanofabrication Photoresist Information]]
* [[Nanofabrication/Masks | Mask Design and Photomask Information]]
* [[Nanofabrication/Processes | Nanofabrication Process Information]]

==test new ==
Fabrication:

* [[Patterning]]
* [[Etching]]
* [[Deposition]]
* [[Thermal/Misc]]
* [[Post Processing]]

{{Standard Footer}}

Hotplate

2021-06-01T21:30:38Z

Csmiller: Created page with "* Optical Hotplates ** Typical temperatures are 90C and 115C *EBL Hotplate ** Typical Temperatures are 150C and 180C"

* Optical Hotplates
** Typical temperatures are 90C and 115C

*EBL Hotplate
** Typical Temperatures are 150C and 180C

Ovens

2021-06-01T21:28:42Z

Csmiller: Created page with "* YES Oven ** Adhesion promotion ** Vacuum Bake * Image Reversal ** Reversal positive photoresist to negative ** vacuum bake"

* YES Oven
** Adhesion promotion
** Vacuum Bake

* Image Reversal
** Reversal positive photoresist to negative
** vacuum bake

Patterning

2021-06-01T21:18:24Z

Csmiller: /* Patterning */

Patterning

2021-06-01T21:15:59Z

Csmiller: /* Patterning */

== Patterning ==

<gallery>
LaserWriter.jpg|Laser Pattern Generator LW405

</gallery>
;[[MA6]]
;[[Nanofabrication/Patterning/Laser Pattern Generator LW405]]
;[[Nanofabrication/Patterning/MLA150]]
;[[Nanofabrication/Patterning/JEOL8100]]
;[[Nanofabrication/Patterning/Raith]]

Patterning

2021-06-01T21:13:43Z

Csmiller: /* Patterning */

== Patterning ==

<gallery>
LaserWriter.jpg|Laser Pattern Generator LW405

</gallery>
;[[Nanofabrication/Patterning/MA6]]
;[[Nanofabrication/Patterning/Laser Pattern Generator LW405]]
;[[Nanofabrication/Patterning/MLA150]]
;[[Nanofabrication/Patterning/JEOL8100]]
;[[Nanofabrication/Patterning/Raith]]

Patterning

2021-06-01T21:08:40Z

Csmiller: /* Patterning */

== Patterning ==

<gallery>
LaserWriter.jpg|Laser Pattern Generator LW405

</gallery>

Patterning

2021-06-01T21:01:48Z

Csmiller: Created page with "== Patterning == <gallery> File:LaserWriter.jpg"

== Patterning ==
<gallery>
File:LaserWriter.jpg

Nanofabrication

2021-06-01T20:45:39Z

Csmiller:

== CNM Cleanroom ==

* [[Nanofabrication/Equipment | Nanofabrication Equipment Descriptions]]
* [[Nanofabrication/Photoresist | Nanofabrication Photoresist Information]]
* [[Nanofabrication/Masks | Mask Design and Photomask Information]]
* [[Nanofabrication/Processes | Nanofabrication Process Information]]

==test new ==
Fabrication
* [[Patterning]]
* [[Etching]]
* [[Deposition]]
* [[Thermal/Misc]]
* [[Post Processing]]

{{Standard Footer}}

Nanofabrication

2021-06-01T20:37:00Z

Csmiller: /* CNM Cleanroom */

== CNM Cleanroom ==

* [[Nanofabrication/Equipment | Nanofabrication Equipment Descriptions]]
* [[Nanofabrication/Photoresist | Nanofabrication Photoresist Information]]
* [[Nanofabrication/Masks | Mask Design and Photomask Information]]
* [[Nanofabrication/Processes | Nanofabrication Process Information]]

==test ==
Fabrication

{{Standard Footer}}

Nanofabrication/Equipment/Wafer Dicing Saw

2021-01-29T00:40:41Z

Csmiller: /* Dicing Saw */

[[File:IMG 0955.JPG|right|400px| ADT 7200 Dicing Saw]]
[[File:IMG 0956.JPG|right|400px|Wafer Mounting System]]

==Dicing Saw==

The ADT7200 Dicing saw is a semiautomatic saw that can cut up from small pieces to a 200mm silicon wafer.

===Features===
* 8 Inch Chuck
materials cut: Silicon, Glass, Sapphire, Quartz, STO

===Thing to know===
* Each user should know or do the following before cutting or requesting staff assistance in cutting:
* Substrate thickness and composition.
* Blue dicing tape thickness: 75 microns (other tape may be a different thickness).
* Spin thin photoresist layer to protect surface if needed.
* Index for all angles
* Where markers are located
* No GaAs, PZT, or heavy metals are allowed.

===Dicing Blades===

===User Proposal Feasibility===

When requesting the use of this instrument, please provide the following information in your user proposal:

* Sample materials
* Layout Drawing
* Number of samples to process or number of times of instrument usage

Questions? Please contact the instrument custodian before submitting your proposal.

Nanofabrication/Equipment/Wafer Dicing Saw

2021-01-08T21:47:49Z

Csmiller: /* Dicing Saw */

[[File:IMG 0955.JPG|right|400px| ADT 7200 Dicing Saw]]
[[File:IMG 0956.JPG|right|400px|Wafer Mounting System]]

==Dicing Saw==

The ADT7200 Dicing saw is a semiautomatic saw that can cut up from small pieces to a 200mm silicon wafer.

===Features===
* 8 Inch Chuck
materials cut: Silicon, Glass, Sapphire, Quartz, STO

===Thing to know===
* Each user should know or do the following before cutting or requesting staff assistance in cutting:
* Substrate thickness and composition.
* Blue dicing tape thickness: 75 microns (other tape may be a different thickness).
* Spin thin photoresist layer to protect surface if needed.
* Index for all angles
* Where markers are located
* No GaAs, PZT, or heavy metals are allowed.

===User Proposal Feasibility===

When requesting the use of this instrument, please provide the following information in your user proposal:

* Sample materials
* Layout Drawing
* Number of samples to process or number of times of instrument usage

Questions? Please contact the instrument custodian before submitting your proposal.

Nanofabrication/Equipment/Filmetrics

2020-12-07T16:22:59Z

Csmiller:

==Features==
[[File:Filmetrics.jpg|right|400px| The instrument is located in the clean room, ]]

===User Proposal Feasibility===

When requesting the use of this instrument, please provide the following information in your user proposal:

* Sample materials and sizes.

Nanofabrication/Equipment/Filmetrics

2020-12-07T16:12:29Z

Csmiller:

==Features==

<gallery>
Filmetrics.jpg|
Example.jpg|Caption2
</gallery>
===User Proposal Feasibility===

When requesting the use of this instrument, please provide the following information in your user proposal:

* Sample materials and sizes.

File:Filmetrics.jpg

2020-12-07T15:36:05Z

Csmiller:

Nanofabrication/Equipment/Filmetrics

2020-12-07T15:11:22Z

Csmiller: /* User Proposal Feasibility */

==Features==

===User Proposal Feasibility===

When requesting the use of this instrument, please provide the following information in your user proposal:

* Sample materials and sizes.

Nanofabrication/Equipment/Filmetrics

2020-12-07T15:10:09Z

Csmiller: Created page with "==Features== ===User Proposal Feasibility=== When requesting the use of this instrument, please provide the following information in your user proposal: * Sample materials..."

==Features==

===User Proposal Feasibility===

When requesting the use of this instrument, please provide the following information in your user proposal:

* Sample materials, Film Thickness

Nanofabrication/Equipment

2020-12-07T15:08:48Z

Csmiller: /* Metrology */

== Lithographic Tools ==
<gallery>
File:LaserWriter.jpg

</gallery>
;[[Nanofabrication/Equipment/MA6 | UV Mask Aligner (front side and front to back)]]

;[[Nanofabrication/Equipment/Laserwriter | Laser Writer]]
;[[Nanofabrication/Equipment/MLA | MLA]]

;[[Nanofabrication/Equipment/Interferometric | Interferometric Lithography System]]

;[[Nanofabrication/Equipment/HVEBL | 100KV Electron Beam Lithography System (JEOL 9100 FS)]]

;[[Nanofabrication/Equipment/LVEBL | Raith 30KV Electron Beam Lithography System]]

;[[Nanofabrication/Equipment/FIB | Focused Ion Beam System]]

== Plasma and Reactive Ion Etching ==

;[[Nanofabrication/Equipment/Oxford ICP etching system | Oxford ICP etching system (2 chambers - 1 loadlock)]]

;[[Nanofabrication/Equipment/Oxford ICP Etching System | Oxford 6 Inch ICP]]

;[[Nanofabrication/Equipment/REACTIVE ION ETCHERS | March RIE etchers]]

== Wet Processing ==

;[[Nanofabrication/Equipment/Wafer Priming Oven | WAFER PRIMING OVEN]]

;[[Nanofabrication/Equipment/Process Stations | LAMINAR FLOW PROCESS STATIONS]]

== Deposition ==
;[[Nanofabrication/Equipment/SmallSputter | Small Coater]]

;[[Nanofabrication/Equipment/AJA Oxide Sputter System | AJA Oxide Sputter System]]

;[[Nanofabrication/Equipment/ Metal Sputter System| AJA Sputter System (metals)]]

;[[Nanofabrication/Equipment/ PVD | FC2000 Ferrotec Ebeam Evaporator(metals)]]

;[[Nanofabrication/Equipment/ICP-CVD Deposition System | ICP - CVD Deposition System]]

== Nanocarbon Synthesis Facilities ==

;[[Nanofabrication/Equipment/MPCVD | Lamda Microwave Plasma CVD system (nanocrystalline diamond deposition)]]

;[[Nanofabrication/Equipment/ Thermal/PECVD System for Synthesis of CNT and Graphene| Thermal/PECVD System for Synthesis of CNT and Graphene]]

;[[Nanofabrication/Equipment/ Seeding Station for UNCD Deposition | Seeding Station for UNCD Deposition]]

== Metrology ==

;[[Nanofabrication/Equipment/Spectroscopic Ellipsometer | SPECTROSCOPIC ELLIPSOMETER]]

;[[Nanofabrication/Equipment/PSIA SPM | SCANNING PROBE MICROSCOPE]]

;[[Nanofabrication/Equipment/Surface Profilometer | SURFACE PROFILOMETERS]]

;[[Nanofabrication/Equipment/Filmetrics | Filmetrics F40-UV]]

;[[Nanofabrication/Equipment/Optical Microscope | OPTICAL MICROSCOPE]]

;[[Nanofabrication/Equipment/Resistivity | RESISTIVITY MEASUREMENT SYSTEM]]

;[[Nanofabrication/Equipment/Scanning Vibrating Electrode | SCANNING VIBRATING ELECTRODE SYSTEM]]

;[[Nanofabrication/Equipment/Voltammetry System | VOLTAMMETRY SYSTEM]]

== Misc Tools ==

;[[Nanofabrication/Equipment/Wafer Dicing Saw | ADT 7200 Dicing Saw]]

;[[Nanofabrication/Equipment/Critical Point Dryer| Critical Point Dryer]]

== Electrical Test and Characterization ==

{{Template:Standard Footer}}

Nanofabrication/Equipment

2020-11-25T17:28:37Z

Csmiller: Undo revision 6737 by Csmiller (talk)

== Lithographic Tools ==
<gallery>
File:LaserWriter.jpg

</gallery>
;[[Nanofabrication/Equipment/MA6 | UV Mask Aligner (front side and front to back)]]

;[[Nanofabrication/Equipment/Laserwriter | Laser Writer]]
;[[Nanofabrication/Equipment/MLA | MLA]]

;[[Nanofabrication/Equipment/Interferometric | Interferometric Lithography System]]

;[[Nanofabrication/Equipment/HVEBL | 100KV Electron Beam Lithography System (JEOL 9100 FS)]]

;[[Nanofabrication/Equipment/LVEBL | Raith 30KV Electron Beam Lithography System]]

;[[Nanofabrication/Equipment/FIB | Focused Ion Beam System]]

== Plasma and Reactive Ion Etching ==

;[[Nanofabrication/Equipment/Oxford ICP etching system | Oxford ICP etching system (2 chambers - 1 loadlock)]]

;[[Nanofabrication/Equipment/Oxford ICP Etching System | Oxford 6 Inch ICP]]

;[[Nanofabrication/Equipment/REACTIVE ION ETCHERS | March RIE etchers]]

== Wet Processing ==

;[[Nanofabrication/Equipment/Wafer Priming Oven | WAFER PRIMING OVEN]]

;[[Nanofabrication/Equipment/Process Stations | LAMINAR FLOW PROCESS STATIONS]]

== Deposition ==
;[[Nanofabrication/Equipment/SmallSputter | Small Coater]]

;[[Nanofabrication/Equipment/AJA Oxide Sputter System | AJA Oxide Sputter System]]

;[[Nanofabrication/Equipment/ Metal Sputter System| AJA Sputter System (metals)]]

;[[Nanofabrication/Equipment/ PVD | FC2000 Ferrotec Ebeam Evaporator(metals)]]

;[[Nanofabrication/Equipment/ICP-CVD Deposition System | ICP - CVD Deposition System]]

== Nanocarbon Synthesis Facilities ==

;[[Nanofabrication/Equipment/MPCVD | Lamda Microwave Plasma CVD system (nanocrystalline diamond deposition)]]

;[[Nanofabrication/Equipment/ Thermal/PECVD System for Synthesis of CNT and Graphene| Thermal/PECVD System for Synthesis of CNT and Graphene]]

;[[Nanofabrication/Equipment/ Seeding Station for UNCD Deposition | Seeding Station for UNCD Deposition]]

== Metrology ==

;[[Nanofabrication/Equipment/Spectroscopic Ellipsometer | SPECTROSCOPIC ELLIPSOMETER]]

;[[Nanofabrication/Equipment/PSIA SPM | SCANNING PROBE MICROSCOPE]]

;[[Nanofabrication/Equipment/Surface Profilometer | SURFACE PROFILOMETERS]]

;[[Nanofabrication/Equipment/Optical Microscope | OPTICAL MICROSCOPE]]

;[[Nanofabrication/Equipment/Resistivity | RESISTIVITY MEASUREMENT SYSTEM]]

;[[Nanofabrication/Equipment/Scanning Vibrating Electrode | SCANNING VIBRATING ELECTRODE SYSTEM]]

;[[Nanofabrication/Equipment/Voltammetry System | VOLTAMMETRY SYSTEM]]

== Misc Tools ==

;[[Nanofabrication/Equipment/Wafer Dicing Saw | ADT 7200 Dicing Saw]]

;[[Nanofabrication/Equipment/Critical Point Dryer| Critical Point Dryer]]

== Electrical Test and Characterization ==

{{Template:Standard Footer}}

Nanofabrication/Equipment

2020-11-25T17:27:48Z

Csmiller: /* Plasma and Reactive Ion Etching */

== Lithographic Tools ==
<gallery>
File:LaserWriter.jpg

</gallery>
;[[Nanofabrication/Equipment/MA6 | UV Mask Aligner (front side and front to back)]]

;[[Nanofabrication/Equipment/Laserwriter | Laser Writer]]
;[[Nanofabrication/Equipment/MLA | MLA]]

;[[Nanofabrication/Equipment/Interferometric | Interferometric Lithography System]]

;[[Nanofabrication/Equipment/HVEBL | 100KV Electron Beam Lithography System (JEOL 9100 FS)]]

;[[Nanofabrication/Equipment/LVEBL | Raith 30KV Electron Beam Lithography System]]

;[[Nanofabrication/Equipment/FIB | Focused Ion Beam System]]

== Plasma and Reactive Ion Etching ==

;[[Nanofabrication/Equipment/Oxford ICP etching system | Oxford ICP etching system (2 chambers - 1 loadlock)]]

;[[Nanofabrication/Equipment/Oxford ICP Etching System | Oxford 6 Inch ICP]]

;[[Nanofabrication/Equipment/Reactive Ion Etching| March RIE etchers]]

== Wet Processing ==

;[[Nanofabrication/Equipment/Wafer Priming Oven | WAFER PRIMING OVEN]]

;[[Nanofabrication/Equipment/Process Stations | LAMINAR FLOW PROCESS STATIONS]]

== Deposition ==
;[[Nanofabrication/Equipment/SmallSputter | Small Coater]]

;[[Nanofabrication/Equipment/AJA Oxide Sputter System | AJA Oxide Sputter System]]

;[[Nanofabrication/Equipment/ Metal Sputter System| AJA Sputter System (metals)]]

;[[Nanofabrication/Equipment/ PVD | FC2000 Ferrotec Ebeam Evaporator(metals)]]

;[[Nanofabrication/Equipment/ICP-CVD Deposition System | ICP - CVD Deposition System]]

== Nanocarbon Synthesis Facilities ==

;[[Nanofabrication/Equipment/MPCVD | Lamda Microwave Plasma CVD system (nanocrystalline diamond deposition)]]

;[[Nanofabrication/Equipment/ Thermal/PECVD System for Synthesis of CNT and Graphene| Thermal/PECVD System for Synthesis of CNT and Graphene]]

;[[Nanofabrication/Equipment/ Seeding Station for UNCD Deposition | Seeding Station for UNCD Deposition]]

== Metrology ==

;[[Nanofabrication/Equipment/Spectroscopic Ellipsometer | SPECTROSCOPIC ELLIPSOMETER]]

;[[Nanofabrication/Equipment/PSIA SPM | SCANNING PROBE MICROSCOPE]]

;[[Nanofabrication/Equipment/Surface Profilometer | SURFACE PROFILOMETERS]]

;[[Nanofabrication/Equipment/Optical Microscope | OPTICAL MICROSCOPE]]

;[[Nanofabrication/Equipment/Resistivity | RESISTIVITY MEASUREMENT SYSTEM]]

;[[Nanofabrication/Equipment/Scanning Vibrating Electrode | SCANNING VIBRATING ELECTRODE SYSTEM]]

;[[Nanofabrication/Equipment/Voltammetry System | VOLTAMMETRY SYSTEM]]

== Misc Tools ==

;[[Nanofabrication/Equipment/Wafer Dicing Saw | ADT 7200 Dicing Saw]]

;[[Nanofabrication/Equipment/Critical Point Dryer| Critical Point Dryer]]

== Electrical Test and Characterization ==

{{Template:Standard Footer}}

Nanofabrication/Equipment

2020-11-25T17:26:32Z

Csmiller: /* Plasma and Reactive Ion Etching */

== Lithographic Tools ==
<gallery>
File:LaserWriter.jpg

</gallery>
;[[Nanofabrication/Equipment/MA6 | UV Mask Aligner (front side and front to back)]]

;[[Nanofabrication/Equipment/Laserwriter | Laser Writer]]
;[[Nanofabrication/Equipment/MLA | MLA]]

;[[Nanofabrication/Equipment/Interferometric | Interferometric Lithography System]]

;[[Nanofabrication/Equipment/HVEBL | 100KV Electron Beam Lithography System (JEOL 9100 FS)]]

;[[Nanofabrication/Equipment/LVEBL | Raith 30KV Electron Beam Lithography System]]

;[[Nanofabrication/Equipment/FIB | Focused Ion Beam System]]

== Plasma and Reactive Ion Etching ==

;[[Nanofabrication/Equipment/Oxford ICP etching system | Oxford ICP etching system (2 chambers - 1 loadlock)]]

;[[Nanofabrication/Equipment/Oxford ICP Etching System | Oxford 6 Inch ICP]]

;[[Nanofabrication/Equipment/REACTIVE ION ETCHERS | March RIE etchers]]

== Wet Processing ==

;[[Nanofabrication/Equipment/Wafer Priming Oven | WAFER PRIMING OVEN]]

;[[Nanofabrication/Equipment/Process Stations | LAMINAR FLOW PROCESS STATIONS]]

== Deposition ==
;[[Nanofabrication/Equipment/SmallSputter | Small Coater]]

;[[Nanofabrication/Equipment/AJA Oxide Sputter System | AJA Oxide Sputter System]]

;[[Nanofabrication/Equipment/ Metal Sputter System| AJA Sputter System (metals)]]

;[[Nanofabrication/Equipment/ PVD | FC2000 Ferrotec Ebeam Evaporator(metals)]]

;[[Nanofabrication/Equipment/ICP-CVD Deposition System | ICP - CVD Deposition System]]

== Nanocarbon Synthesis Facilities ==

;[[Nanofabrication/Equipment/MPCVD | Lamda Microwave Plasma CVD system (nanocrystalline diamond deposition)]]

;[[Nanofabrication/Equipment/ Thermal/PECVD System for Synthesis of CNT and Graphene| Thermal/PECVD System for Synthesis of CNT and Graphene]]

;[[Nanofabrication/Equipment/ Seeding Station for UNCD Deposition | Seeding Station for UNCD Deposition]]

== Metrology ==

;[[Nanofabrication/Equipment/Spectroscopic Ellipsometer | SPECTROSCOPIC ELLIPSOMETER]]

;[[Nanofabrication/Equipment/PSIA SPM | SCANNING PROBE MICROSCOPE]]

;[[Nanofabrication/Equipment/Surface Profilometer | SURFACE PROFILOMETERS]]

;[[Nanofabrication/Equipment/Optical Microscope | OPTICAL MICROSCOPE]]

;[[Nanofabrication/Equipment/Resistivity | RESISTIVITY MEASUREMENT SYSTEM]]

;[[Nanofabrication/Equipment/Scanning Vibrating Electrode | SCANNING VIBRATING ELECTRODE SYSTEM]]

;[[Nanofabrication/Equipment/Voltammetry System | VOLTAMMETRY SYSTEM]]

== Misc Tools ==

;[[Nanofabrication/Equipment/Wafer Dicing Saw | ADT 7200 Dicing Saw]]

;[[Nanofabrication/Equipment/Critical Point Dryer| Critical Point Dryer]]

== Electrical Test and Characterization ==

{{Template:Standard Footer}}

Nanofabrication/Equipment/Oxford ICP etching system

2020-11-25T17:23:32Z

Csmiller:

===Oxford ICP etching system (2 chambers - 1 loadlock)===
[[Image:ICPRIE.JPG|right|400px|]]

===Features===
:PlasmaLab System 100 (Oxford Instruments) located in C122. The system comprises two process stations (Chamber 1 (ICP 180) dedicated to chlorine-based etch chemistry and Process Chamber 3 (ICP 180) dedicated to fluorine-based etch chemistry) and a single automatic load lock / transfer chamber. Process chamber capable for 4" .
*The gases available for the ICP – Chlorine chamber are: Ar, O2, Cl2, BCl3, CO, SF6, CHF3, and HBr.
*The gases available for the RIE – Fluorine chamber are: Ar, O2, CF4, CH4, SF6, CHF3, HCFC-124, and H2.
*For Process Station ICP 180 the typical process operating ranges are:
** base pressure = 10-6 Torr
** total gas flows = 10 to 200 sccm
** pressure = 1 to 60 mT
** RF power = 5W to 300 W
** ICP power = 200W to 3000W
** He pressure = 0 to 30 Torr
** Temperature = -130oC to 600oC
** Liquid Nitrogen for temperature control
*For Process Station RIE the typical process operating ranges are:
** base pressure = 10-6 Torr
** total gas flows = 10 to 150 sccm
** pressure = 5 to 500 mT
** RF power = 20W to 600 W
** He pressure = 0 to 30 Torr
===User Proposal Feasibility===

When requesting the use of this instrument, please provide the following information in your user proposal:

* Sample materials
* Number of samples to process or number of times of instrument usage

Questions? Please contact the instrument custodian before submitting your proposal

Nanofabrication/Equipment/Oxford ICP etching system

2020-11-25T17:21:32Z

Csmiller:

Nanofabrication/Equipment/Oxford ICP etching system

2020-11-25T17:18:52Z

Csmiller: /* Features */

===Oxford ICP etching system (2 chambers - 1 loadlock)===

===Features===
:PlasmaLab System 100 (Oxford Instruments) located in C122. The system comprises two process stations (Chamber 1 (ICP 180) dedicated to chlorine-based etch chemistry and Process Chamber 3 (ICP 180) dedicated to fluorine-based etch chemistry) and a single automatic load lock / transfer chamber. Process chamber capable for 4" .
*The gases available for the ICP – Chlorine chamber are: Ar, O2, Cl2, BCl3, CO, SF6, CHF3, and HBr.
*The gases available for the RIE – Fluorine chamber are: Ar, O2, CF4, CH4, SF6, CHF3, HCFC-124, and H2.
*For Process Station ICP 180 the typical process operating ranges are:
** base pressure = 10-6 Torr
** total gas flows = 10 to 200 sccm
** pressure = 1 to 60 mT
** RF power = 5W to 300 W
** ICP power = 200W to 3000W
** He pressure = 0 to 30 Torr
** Temperature = -130oC to 600oC
** Liquid Nitrogen for temperature control
*For Process Station RIE the typical process operating ranges are:
** base pressure = 10-6 Torr
** total gas flows = 10 to 150 sccm
** pressure = 5 to 500 mT
** RF power = 20W to 600 W
** He pressure = 0 to 30 Torr

Nanofabrication/Equipment/Oxford ICP etching system

2020-11-25T17:17:43Z

Csmiller:

===Oxford ICP etching system (2 chambers - 1 loadlock)===

===Features===
:PlasmaLab System 100 (Oxford Instruments) located in C122. The system comprises two process stations (Process Station 1 (ICP 180) dedicated to chlorine-based etch chemistry and Process Station 2 (ICP) dedicated to fluorine-based etch chemistry) and a single automatic load lock / transfer chamber. Process chamber capable for 4" .
*The gases available for the ICP – Chlorine chamber are: Ar, O2, Cl2, BCl3, CO, SF6, CHF3, and HBr.
*The gases available for the RIE – Fluorine chamber are: Ar, O2, CF4, CH4, SF6, CHF3, HCFC-124, and H2.
*For Process Station ICP 180 the typical process operating ranges are:
** base pressure = 10-6 Torr
** total gas flows = 10 to 200 sccm
** pressure = 1 to 60 mT
** RF power = 5W to 300 W
** ICP power = 200W to 3000W
** He pressure = 0 to 30 Torr
** Temperature = -130oC to 600oC
** Liquid Nitrogen for temperature control
*For Process Station RIE the typical process operating ranges are:
** base pressure = 10-6 Torr
** total gas flows = 10 to 150 sccm
** pressure = 5 to 500 mT
** RF power = 20W to 600 W
** He pressure = 0 to 30 Torr

Nanofabrication/Equipment/REACTIVE ION ETCHERS

2020-11-25T17:15:51Z

Csmiller:

===March RIE etchers===
[[Image:March1.jpg|right|400px|]]

* There are two systems CS-1701 RIE, one for fluorinated gases and one for chlorinated gases. The operational procedure is identical for both systems and they can be used in the same time.
* The CS-1701 RIE consists of two modules: a reaction chamber/process controller (base pressure 50 mT) and a solid state RF power generator (max. 600 W).
* The process controller monitors and regulates the variable parameters of the plasma process, including chamber pressure, RF power level, process time, and gas flow rates.
** The gases for the RIE – Fluorine chamber are: Ar, O2, CF4, H2, and SF6. The estimated etch rate are: TiW: 5,000 Å/min, SiO2: 3,000 – 7,000 Å/min.
** The gases for the RIE – Chlorine chamber are: Ar, O2, Cl2, H2, and CH4. The estimated etch rate are: Al: 1μm/min, GaAs: 1μm/min.

===User Proposal Feasibility===

When requesting the use of this instrument, please provide the following information in your user proposal:

* Sample materials
* Number of samples to process or number of times of instrument usage

Questions? Please contact the instrument custodian before submitting your proposal.

Nanofabrication/Equipment/Oxford ICP etching system

2020-11-25T17:14:00Z

Csmiller: Created page with "===Features=== :PlasmaLab System 100 (Oxford Instruments) located in C122. The system comprises two process stations (Process Station 1 (ICP 180) dedicated to chlorine-based e..."

===Features===
:PlasmaLab System 100 (Oxford Instruments) located in C122. The system comprises two process stations (Process Station 1 (ICP 180) dedicated to chlorine-based etch chemistry and Process Station 2 (ICP) dedicated to fluorine-based etch chemistry) and a single automatic load lock / transfer chamber. Process chamber capable for 4" .
*The gases available for the ICP – Chlorine chamber are: Ar, O2, Cl2, BCl3, CO, SF6, CHF3, and HBr.
*The gases available for the RIE – Fluorine chamber are: Ar, O2, CF4, CH4, SF6, CHF3, HCFC-124, and H2.
*For Process Station ICP 180 the typical process operating ranges are:
** base pressure = 10-6 Torr
** total gas flows = 10 to 200 sccm
** pressure = 1 to 60 mT
** RF power = 5W to 300 W
** ICP power = 200W to 3000W
** He pressure = 0 to 30 Torr
** Temperature = -130oC to 600oC
** Liquid Nitrogen for temperature control
*For Process Station RIE the typical process operating ranges are:
** base pressure = 10-6 Torr
** total gas flows = 10 to 150 sccm
** pressure = 5 to 500 mT
** RF power = 20W to 600 W
** He pressure = 0 to 30 Torr

Nanofabrication/Equipment

2020-11-25T17:11:16Z

Csmiller: /* Plasma and Reactive Ion Etching */

== Lithographic Tools ==
<gallery>
File:LaserWriter.jpg

</gallery>
;[[Nanofabrication/Equipment/MA6 | UV Mask Aligner (front side and front to back)]]

;[[Nanofabrication/Equipment/Laserwriter | Laser Writer]]
;[[Nanofabrication/Equipment/MLA | MLA]]

;[[Nanofabrication/Equipment/Interferometric | Interferometric Lithography System]]

;[[Nanofabrication/Equipment/HVEBL | 100KV Electron Beam Lithography System (JEOL 9100 FS)]]

;[[Nanofabrication/Equipment/LVEBL | Raith 30KV Electron Beam Lithography System]]

;[[Nanofabrication/Equipment/FIB | Focused Ion Beam System]]

== Plasma and Reactive Ion Etching ==

;[[Nanofabrication/Equipment/Oxford ICP etching system | Oxford ICP etching system (2 chambers - 1 loadlock)]]

;[[Nanofabrication/Equipment/REACTIVE ION ETCHERS | March RIE etchers]]

== Wet Processing ==

;[[Nanofabrication/Equipment/Wafer Priming Oven | WAFER PRIMING OVEN]]

;[[Nanofabrication/Equipment/Process Stations | LAMINAR FLOW PROCESS STATIONS]]

== Deposition ==
;[[Nanofabrication/Equipment/SmallSputter | Small Coater]]

;[[Nanofabrication/Equipment/AJA Oxide Sputter System | AJA Oxide Sputter System]]

;[[Nanofabrication/Equipment/ Metal Sputter System| AJA Sputter System (metals)]]

;[[Nanofabrication/Equipment/ PVD | FC2000 Ferrotec Ebeam Evaporator(metals)]]

;[[Nanofabrication/Equipment/ICP-CVD Deposition System | ICP - CVD Deposition System]]

== Nanocarbon Synthesis Facilities ==

;[[Nanofabrication/Equipment/MPCVD | Lamda Microwave Plasma CVD system (nanocrystalline diamond deposition)]]

;[[Nanofabrication/Equipment/ Thermal/PECVD System for Synthesis of CNT and Graphene| Thermal/PECVD System for Synthesis of CNT and Graphene]]

;[[Nanofabrication/Equipment/ Seeding Station for UNCD Deposition | Seeding Station for UNCD Deposition]]

== Metrology ==

;[[Nanofabrication/Equipment/Spectroscopic Ellipsometer | SPECTROSCOPIC ELLIPSOMETER]]

;[[Nanofabrication/Equipment/PSIA SPM | SCANNING PROBE MICROSCOPE]]

;[[Nanofabrication/Equipment/Surface Profilometer | SURFACE PROFILOMETERS]]

;[[Nanofabrication/Equipment/Optical Microscope | OPTICAL MICROSCOPE]]

;[[Nanofabrication/Equipment/Resistivity | RESISTIVITY MEASUREMENT SYSTEM]]

;[[Nanofabrication/Equipment/Scanning Vibrating Electrode | SCANNING VIBRATING ELECTRODE SYSTEM]]

;[[Nanofabrication/Equipment/Voltammetry System | VOLTAMMETRY SYSTEM]]

== Misc Tools ==

;[[Nanofabrication/Equipment/Wafer Dicing Saw | ADT 7200 Dicing Saw]]

;[[Nanofabrication/Equipment/Critical Point Dryer| Critical Point Dryer]]

== Electrical Test and Characterization ==

{{Template:Standard Footer}}

Nanofabrication/Equipment/Oxford ICP and RIE etching system

2020-11-25T17:07:32Z

Csmiller:

== Oxford ICP and RIE Etcher (1 loadlock, 2 chambers)==
[[Image:ICPRIE.JPG|right|400px|]]

===Features===
:PlasmaLab System 100 (Oxford Instruments) located in C122. The system comprises two process stations (Process Station 1 (ICP 180) dedicated to chlorine-based etch chemistry and Process Station 2 (RIE) dedicated to fluorine-based etch chemistry) and a single automatic load lock / transfer chamber. Process chamber capable for 4" and 6" wafers.
*The gases available for the ICP Chamber 1 – Chlorine chamber are: Ar, O2, Cl2, BCl3, CO, SF6, CHF3, and HBr.
*The gases available for the ICP Chamber 3 – Fluorine chamber are: Ar, O2, CF4, CH4, SF6, CHF3, HCFC-124, and H2.
*For Process Station ICP 180 the typical process operating ranges are:
** base pressure = 10-6 Torr
** total gas flows = 10 to 200 sccm
** pressure = 1 to 60 mT
** RF power = 5W to 300 W
** ICP power = 200W to 3000W
** He pressure = 0 to 30 Torr
** Temperature = -130oC to 600oC
** Liquid Nitrogen for temperature control
*For Process Station RIE the typical process operating ranges are:
** base pressure = 10-6 Torr
** total gas flows = 10 to 150 sccm
** pressure = 5 to 500 mT
** RF power = 20W to 600 W
** He pressure = 0 to 30 Torr
** Temperature = -130oC to 600oC
** Liquid Nitrogen for temperature control
*The operational procedure is identical for both stations and only one station can be used at a time.

File:ICPRIE.JPG

2020-11-25T17:05:28Z

Csmiller:

Nanofabrication/Equipment/REACTIVE ION ETCHERS

2020-11-25T16:51:52Z

Csmiller:

[[Image:March1.jpg|right|400px|]]

* There are two systems CS-1701 RIE, one for fluorinated gases and one for chlorinated gases. The operational procedure is identical for both systems and they can be used in the same time.
* The CS-1701 RIE consists of two modules: a reaction chamber/process controller (base pressure 50 mT) and a solid state RF power generator (max. 600 W).
* The process controller monitors and regulates the variable parameters of the plasma process, including chamber pressure, RF power level, process time, and gas flow rates.
** The gases for the RIE – Fluorine chamber are: Ar, O2, CF4, H2, and SF6. The estimated etch rate are: TiW: 5,000 Å/min, SiO2: 3,000 – 7,000 Å/min.
** The gases for the RIE – Chlorine chamber are: Ar, O2, Cl2, H2, and CH4. The estimated etch rate are: Al: 1μm/min, GaAs: 1μm/min.

===User Proposal Feasibility===

When requesting the use of this instrument, please provide the following information in your user proposal:

* Sample materials
* Number of samples to process or number of times of instrument usage

Questions? Please contact the instrument custodian before submitting your proposal.

File:March1.jpg

2020-11-25T16:50:59Z

Csmiller: